We are today a fab-less manufacturer of integrated circuits. Our company name suggests that we work with gate arrays and this was also how it all started in 1986. You will find below some important milestones on our way from gate arrays to Specific Components. 

2014 - High volume production. Several projects with an expected production volume in the order of million devices have been developed. We have also installed equipment for in-house testing of eight inch wafers.

2013 - SOI for low leakage and high voltage. A new Silicon On Insulator process has been used to enable high voltage analog switches with very low leakage current. An analog switch architecture optimized also for very low crosstalk is used.

2012 - LTB replacement components. Several components that replace components under Last Time Buy have been developed for a high reliability application. Compatibility both concerning electrical and mechanical performance is very important.

2011 - Advanced microcontroller interface. Our components do now normally contain advanced functions for microcontroller interface. This may include OTP-cells for factory trimming and non-volatile memory cells for application data. Analog components do indeed also contain digital functions.

2010 - SOI for charge amplifier performance. We have used the advantages of a Silicon On Insulator process to create very low leakage inputs for charge amplifier applications.

2009 - High temperature assembly solutions. The CQFN-series of hermetic packages is a very compact alternative for integration of high temperature components. The SG0614 module shows a method of integrating an instrumentation amplifier within a sensor housing. 

2008 - New bipolar process. A compact process that addresses applications handling signals in the 20V range. Integrated resistors optimized for low temperature coefficient give excellent analog performance.

2007 - Introduction of SG0611. This is a High Temperature Instrumentation Amplifier mainly intended for use in sensor applications. The standard product SG0611 is an evolution of the SG0121 that was introduced in 2005.

2006 - New high performance process. Trench isolation is a technique used to improve high speed performance. This process combines 12V supply with 9 GHz transistors. The applications targeted with this process include for example high speed amplifiers.

2005 - First High Temperature product. The Silicon On Insulator (SOI) principle makes it possible to design High Temperature products by dramatically reducing the effect of leakage currents.

2004 - Automatic pick and place handling. Handling equipment for final test of JEDEC-tray based components was installed. Tooling was made for several QFN and QFP packages.

2002 - First wafers manufactured in China. Development started of the first products in a bipolar process manufactured in China. This process targets medium voltage low bandwidth applications and is cost effective for high production volumes.

2000 - Automatic wafer handling. Handling equipment for automatic wafer sort of up to six inch wafers was installed.

1999 - New office. We moved within Linköping to the address where we still are located. Offices and production facilities for wafer sort and final test are well integrated with each other.

1993 - First Full Custom product. This was a bipolar amplifier component for communication purpose.

1989 - Introducing Analog Arrays. We started working with the RLA-series from Raytheon. RLA is a family of bipolar analog arrays suitable for applications with up to 32V supply voltage and low demands on bandwidth.

1986 - First Mixed Signal Array. This is a CMOS array for low complexity digital and 12V analog applications.

1986 - Digital Gate Arrays. The main business in the early years was design and prototyping of digital applications in gate arrays.